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GIS Defects Simulation Device

GIS Non Partial Discharge Failure Simulation Test Device,
GIS Partial Discharge Free Simulator,
Fault Simulation System For Converter Transformer

Product Description


GIS defects simulation device simulate various discharge phenomena inside GIS,suitable for experimental research and instrument assessment of GIS partial discharge live detection.


  1. Good authenticity: It is designed according to the physical GIS, and the various partial discharge faults inside the GIS are truly simulated.
  2. Good integrity: high-voltage equipment such as step-up transformers and coupling capacitors are built into the GIS.
  3. Fault simulation: It can simulate GIS tip, suspension, air gap, particle, creeping and other discharge types, and multiple discharges can be combined.
  4. Controllable discharge: The type of discharge can be selected arbitrarily to control the initial voltage, extinguishing voltage and discharge intensity of each discharge signal.
  5. Diversified detection: It can provide a test platform for pulse current, UHF, ultrasonic, high frequency, SF6 gas analysis and other technical detection.
  6. Metering transmission: Built-in pulse current method related coupling and calibration unit, which can be detected simultaneously.
  7. Good stability: Each discharge module can be used repeatedly, and the discharge characteristics are stable.
  8. Convenient operation: the occurrence and disappearance of various faults can be directly controlled outside the device.
  9. Diversification of basins: The basin insulators are equipped with various types such as fully shielded, bare basin, and pouring port.
  10. Visualization: Built-in infrared video probe, convenient to observe the internal state and   capture discharge video.
  11. Built-in sensor: built-in ultra-high frequency sensor, which is convenient for comparison with the tested instrument.


  1. Voltage level: 110~500kV
  2. Partial discharge: ≤1pC
  3. Adjustment method: manual, electric
  4. Coupling capacitance: 50pF
  5. Discharge simulation: tip 5~800pC, particle 0.1~10pC, suspension 100~20000pC, air gap 10~1000pC, along the surface 10~1000pC.